The earliest type of the transistor is the bipolar one invented in 1948 as a replacement for the triode vacuum tube. It consists of three layers of doped material, forming two p-n (bipolar) junctions with configurations of p-n-p or n-p-n. One junction is connected to a battery so as to allow current flow (forward bias), and the other junction has a battery connected in the opposite direction (reverse bias). If the current in the forward-biased junction is varied by the addition of a signal, the current in the reverse- biased junction of the transistor will vary accordingly. The principle can be used to construct amplifiers in which a small signal applied to the forward- biased junction causes a large change in current in the reverse-biased junction.
Another type of transistor is the field-effect transistor (FET). Such a transistor operates on the principle of repulsion or attraction of charges due to a superimposed electric field. So they are voltage rather than current controlled, and the base, collector, and emitter functions of the bipolar junction transistor are replaced by the so-called gate, drain, and source terminals, respectively. The control voltage is applied at right angles to the current to be controlled. In contrast to bipolar transistors the function of the field-effect transistors involves only one type of current carriers (electrons or holes), so sometimes they are considered as unipolar type. Different types of field effect transistors include the junction-gate field effect transistor (JFET), the metal-oxide-semiconductor field effect transistor (MOSFET), and the insulated-gate field effect transistor (1GFET). The smallest MOSFET is 1/75,000 as wide as a human hair. The MOSFET has for the most part replaced the bipolar junction transistor in computer memory chips. Usually a memory unit consists of two metal- oxide semiconductor field effect transistors, one N-type and one P-type, integrated on a single silicon chip. Field-effect transistors operate more efficiently than bipolar types, because a large signal can be controlled by a very small amount of energy. These devices have very high speed and extremely low power consumption. They are, however, easily damaged by static electricity [22, p. 135-136].
Ninjatrader for mac. This article goes over many of the different types of transistors that existand the properties and characteristics that make up each one. BJTs and FETs are two different types of transistors. The main difference between BJT and FET is, BJT is a type of bipolar transistor, but FET is a unipolar. The primary transistor is the BJT and FET is the modern version of transistor. Let us have a look at the BJTs. Bipolar Junction Transistor. A Bipolar junction transistor, shortly termed as BJT is called so as it has two PN junctions for its function. This BJT is nothing but a normal transistor. It has got two types of configurations NPN and PNP. An easy-to-understand introduction to transistors, including simple diagrams explaining how junction transistors and FETs work.
Fet Transistor Operation
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Different Types Of Fet Transistors
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Смотреть что такое 'switching-type transistor' в других словарях:
switching-type transistor — perjungimo tranzistorius statusas T sritis fizika atitikmenys: angl. switching transistor; switching type transistor vok. Schalttransistor, m rus. переключающий транзистор, m pranc. transistor de commutation, m … Fizikos terminų žodynas
switching transistor — perjungimo tranzistorius statusas T sritis fizika atitikmenys: angl. Download mac os x yosemite for mac. switching transistor; switching type transistor vok. Schalttransistor, m rus. переключающий транзистор, m pranc. transistor de commutation, m … Fizikos terminų žodynas
transistor de commutation — perjungimo tranzistorius statusas T sritis fizika atitikmenys: angl. switching transistor; switching type transistor vok. Schalttransistor, m rus. переключающий транзистор, m pranc. transistor de commutation, m … Fizikos terminų žodynas
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